FCP4N60
Manufacturer:
On Semiconductor
Mfr.Part #:
FCP4N60
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 50 W 600 V Continuous Drain Current (ID):3.9 A 16.6 nC
| Parameter | Value |
|---|---|
| Gate Charge | 16.6 nC |
| Gate to Source Threshold Voltage | 3 V |
| Continuous Drain Current (ID) | 3.9 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 1 Ω |
| Input capacitance | 540 pF |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Power Dissipation | 50 W |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Number of Channels | 1 |
| Packaging | Tube |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
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